SCT3080ALHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 30A TO247N
$22.09
Available to order
Reference Price (USD)
1+
$16.73000
10+
$15.37600
25+
$14.73880
100+
$12.98620
450+
$12.34884
Exquisite packaging
Discount
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The SCT3080ALHRC11 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's SCT3080ALHRC11 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 134W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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