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SCT3160KLHRC11

Rohm Semiconductor
SCT3160KLHRC11 Preview
Rohm Semiconductor
SICFET N-CH 1200V 17A TO247N
$16.56
Available to order
Reference Price (USD)
1+
$12.54000
10+
$11.52700
25+
$11.04880
100+
$9.73500
450+
$9.25722
900+
$8.65998
Exquisite packaging
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Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
  • Vgs (Max): +22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 103W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3

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