SCTL90N65G2V
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
$39.05
Available to order
Reference Price (USD)
1+
$39.05000
500+
$38.6595
1000+
$38.269
1500+
$37.8785
2000+
$37.488
2500+
$37.0975
Exquisite packaging
Discount
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The SCTL90N65G2V from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SCTL90N65G2V offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 935W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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