SCTW100N65G2AG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 100A HIP247
$39.56
Available to order
Reference Price (USD)
1+
$39.56000
500+
$39.1644
1000+
$38.7688
1500+
$38.3732
2000+
$37.9776
2500+
$37.582
Exquisite packaging
Discount
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Meet the SCTW100N65G2AG by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCTW100N65G2AG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3315 pF @ 520 V
- FET Feature: -
- Power Dissipation (Max): 420W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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