SCTWA35N65G2V
STMicroelectronics
STMicroelectronics
TRANS SJT N-CH 650V 45A TO247
$19.57
Available to order
Reference Price (USD)
1+
$19.57000
500+
$19.3743
1000+
$19.1786
1500+
$18.9829
2000+
$18.7872
2500+
$18.5915
Exquisite packaging
Discount
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Optimize your power electronics with the SCTWA35N65G2V single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCTWA35N65G2V combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 73000 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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