SCTWA35N65G2VAG
STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A TO247
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The SCTWA35N65G2VAG from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's SCTWA35N65G2VAG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
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