SCTWA60N120G2-4
STMicroelectronics
STMicroelectronics
SILICON CARBIDE POWER MOSFET 120
$32.93
Available to order
Reference Price (USD)
1+
$32.93000
500+
$32.6007
1000+
$32.2714
1500+
$31.9421
2000+
$31.6128
2500+
$31.2835
Exquisite packaging
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The SCTWA60N120G2-4 by STMicroelectronics is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose STMicroelectronics for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 388W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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