SDT30150GCT
Diodes Incorporated
Diodes Incorporated
TRENCH SCHOTTKY RECTIFIER GEN II
$1.07
Available to order
Reference Price (USD)
1+
$1.07460
500+
$1.063854
1000+
$1.053108
1500+
$1.042362
2000+
$1.031616
2500+
$1.02087
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SDT30150GCT from Diodes Incorporated sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Diodes Incorporated's rigorous quality control ensures the SDT30150GCT maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 8 µA @ 150 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
Diodes Incorporated
BAV170-7-F
Vishay General Semiconductor - Diodes Division
BAT54C-E3-18
Taiwan Semiconductor Corporation
MBRS2045CTH
Vishay General Semiconductor - Diodes Division
SS8P2CL-M3/87A
Sanken
MPE-220A
Vishay General Semiconductor - Diodes Division
FEP16HT-E3/45
Panjit International Inc.
SB4045PT_T0_00001
SMC Diode Solutions
16CTQ150
Vishay General Semiconductor - Diodes Division
VS-30CPQ040-N3
Vishay General Semiconductor - Diodes Division