SE10DBHM3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A TO263AC
$0.40
Available to order
Reference Price (USD)
2,000+
$0.34800
6,000+
$0.33600
Exquisite packaging
Discount
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The SE10DBHM3/I by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The SE10DBHM3/I is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the SE10DBHM3/I delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3000 ns
- Current - Reverse Leakage @ Vr: 15 µA @ 100 V
- Capacitance @ Vr, F: 67pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
- Supplier Device Package: TO-263AC (SMPD)
- Operating Temperature - Junction: -55°C ~ 175°C
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