SF38GHB0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
$0.00
Available to order
Reference Price (USD)
4,000+
$0.17050
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SF38GHB0G from Taiwan Semiconductor Corporation is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Taiwan Semiconductor Corporation's SF38GHB0G for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
VS-MBR1100TR
Microsemi Corporation
MS106/TR12
Panasonic Electronic Components
MA3X704A0L
onsemi
MBRM140T3H
Diodes Incorporated
B360B-13-G
Microsemi Corporation
MS106E3/TR8
Taiwan Semiconductor Corporation
ES15DLW RVG
GeneSiC Semiconductor
GB05SLT12-220
Taiwan Semiconductor Corporation
1N5402G A0G
Vishay General Semiconductor - Diodes Division