Shopping cart

Subtotal: $0.00

SFS1008GHMNG

Taiwan Semiconductor Corporation
SFS1008GHMNG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
$0.00
Available to order
Reference Price (USD)
4,000+
$0.35420
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

NXP USA Inc.

PMEG3005EB115

Micro Commercial Co

FR1003-TP

Diodes Incorporated

SF30DG-B

Taiwan Semiconductor Corporation

SK52CHM6G

Taiwan Semiconductor Corporation

SR202HA0G

SMC Diode Solutions

FR301

Vishay General Semiconductor - Diodes Division

NSB8KTHE3/81

Taiwan Semiconductor Corporation

SR109 B0G

Vishay General Semiconductor - Diodes Division

AR4PDHM3/86A

Top