Shopping cart

Subtotal: $0.00

SFT18GHA0G

Taiwan Semiconductor Corporation
SFT18GHA0G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
$0.00
Available to order
Reference Price (USD)
12,000+
$0.07285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Rohm Semiconductor

SCS208AGC

Vishay General Semiconductor - Diodes Division

8ETX06FP

Vishay General Semiconductor - Diodes Division

VS-80APF06PBF

Bourns Inc.

CD214A-B190LF

Taiwan Semiconductor Corporation

RS1KL MTG

Vishay General Semiconductor - Diodes Division

VS-8EWS08SPBF

Taiwan Semiconductor Corporation

HER103G B0G

Panjit International Inc.

GS1006HE-AU_R1_000A1

Fairchild Semiconductor

MBRS130L

Vishay General Semiconductor - Diodes Division

LL103A-7

Top