SG2013J
Microchip Technology
Microchip Technology
DRIVER - MEDIUM CURRENT ARRAY, H
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Meet the SG2013J Microchip Technology s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the SG2013J demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 900 @ 500mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 16-CDIP (0.300", 7.62mm)
- Supplier Device Package: 16-CERDIP
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