SGP02N60XKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 6A 30W TO220-3
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Upgrade your power management systems with the SGP02N60XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the SGP02N60XKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose SGP02N60XKSA1 for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
- Power - Max: 30 W
- Switching Energy: 64µJ
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 20ns/259ns
- Test Condition: 400V, 2A, 118Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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