SH8K26GZ0TB
Rohm Semiconductor
Rohm Semiconductor
4V DRIVE NCH+NCH MOSFET. MIDDLE
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
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The SH8K26GZ0TB by Rohm Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the SH8K26GZ0TB ensures consistent and dependable performance. Rohm Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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