SH8M51GZETB
Rohm Semiconductor
Rohm Semiconductor
4V DRIVE NCH+PCH MOSFET. SH8M51
$1.78
Available to order
Reference Price (USD)
1+
$1.78000
500+
$1.7622
1000+
$1.7444
1500+
$1.7266
2000+
$1.7088
2500+
$1.691
Exquisite packaging
Discount
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Optimize your electronic projects with the SH8M51GZETB from Rohm Semiconductor, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SH8M51GZETB ensures top-notch performance. Rohm Semiconductor's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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