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SI1056X-T1-E3

Vishay Siliconix
SI1056X-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 20V 1.32A SC89-6
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89 (SOT-563F)
  • Package / Case: SOT-563, SOT-666

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