SI1065X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 1.18A SC89-6
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Discover the SI1065X-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SI1065X-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 1.18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 1.18A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89 (SOT-563F)
- Package / Case: SOT-563, SOT-666
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