SI1070X-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 1.2A SC89-6
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Optimize your power electronics with the SI1070X-T1-E3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI1070X-T1-E3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89 (SOT-563F)
- Package / Case: SOT-563, SOT-666
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