Shopping cart

Subtotal: $0.00

SI1414DH-T1-GE3

Vishay Siliconix
SI1414DH-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 30V 4A SOT-363
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363

Related Products

Infineon Technologies

IPB230N06L3GATMA1

Infineon Technologies

IRF6674TR1PBF

Infineon Technologies

SPW52N50C3FKSA1

Vishay Siliconix

IRFBE20S

Vishay Siliconix

IRFL214TR

Diodes Incorporated

ZVN2120A

Infineon Technologies

IPP60R520CPXKSA1

Vishay Siliconix

IRFR010TRR

Infineon Technologies

IRF7420

Top