SI2323DS-T1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 3.7A SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SI2323DS-T1 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SI2323DS-T1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Renesas Electronics America Inc
NP90N06VLG-E1-AY
onsemi
FDD5N50TF_WS
Toshiba Semiconductor and Storage
2SK1829TE85LF
Fairchild Semiconductor
HUF75545S3ST_NL
Rohm Semiconductor
R6035KNZ1C9
STMicroelectronics
STP75NF68
Vishay Siliconix
SI1071X-T1-E3
onsemi
MTY100N10E
Renesas Electronics America Inc
HAT1047RWS-E
IXYS