SI3443DV
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 20V 4.4A MICRO6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.15663
6,000+
$0.14714
15,000+
$0.13765
30,000+
$0.12626
75,000+
$0.12151
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI3443DV by Fairchild Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI3443DV is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro6™(TSOP-6)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Renesas Electronics America Inc
NP48N055KLE-E1-AY
Vishay Siliconix
SI7366DP-T1-E3
Infineon Technologies
IRF3711ZCSTRRP
Infineon Technologies
BSC118N10NSG
Infineon Technologies
BSZ12DN20NS3G
Infineon Technologies
IPP80P03P4L07AKSA1
Infineon Technologies
IRFSL31N20D
onsemi
NTJS3157NT4
Infineon Technologies
IPI50R350CP
Infineon Technologies