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SI3454CDV-T1-GE3

Vishay Siliconix
SI3454CDV-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 30V 4.2A 6TSOP
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 1.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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