SI3456CDV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 7.7A 6TSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3456CDV-T1-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SI3456CDV-T1-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Vishay Siliconix
IRFZ24L
Infineon Technologies
IPP084N06L3GXK
Infineon Technologies
IPD400N06NGBTMA1
STMicroelectronics
STP8NS25FP
Infineon Technologies
BSC059N03S G
Renesas Electronics America Inc
RJL6020DPK-00#T0
Vishay Siliconix
SIE876DF-T1-GE3
Infineon Technologies
IRFR3707
Alpha & Omega Semiconductor Inc.
AOT1100L
Infineon Technologies