SI3460BDV-T1-BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 20-V (D-S) MOSFET
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3460BDV-T1-BE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI3460BDV-T1-BE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Nexperia USA Inc.
PSMN1R9-40PLQ
Vishay Siliconix
SQ3419AEEV-T1_GE3
Diodes Incorporated
MMBF170Q-13-F
STMicroelectronics
STB16NF06LT4
STMicroelectronics
STW30N80K5
Vishay Siliconix
SI3457CDV-T1-GE3
Nexperia USA Inc.
BUK9M24-40EX
STMicroelectronics
STFI260N6F6
Infineon Technologies
IPB80N06S2H5ATMA2
Nexperia USA Inc.