SI3473CDV-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 12-V (D-S) MOSFET
$0.74
Available to order
Reference Price (USD)
1+
$0.74000
500+
$0.7326
1000+
$0.7252
1500+
$0.7178
2000+
$0.7104
2500+
$0.703
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SI3473CDV-T1-BE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SI3473CDV-T1-BE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Wolfspeed, Inc.
C3M0075120K-A
onsemi
FDMS86150A
Micro Commercial Co
2N7002KHE3-TP
Infineon Technologies
IPF017N08NF2SATMA1
Diodes Incorporated
DMNH4006SPS-13
Renesas Electronics America Inc
2SK3305B-S19-AY
onsemi
6HP04MH-TL-E
Infineon Technologies
IPC300N15N3RX2MA1
onsemi
NTTFS5D1N06HLTAG
Fairchild Semiconductor