SI3493DV-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 5.3A 6TSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3493DV-T1-E3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SI3493DV-T1-E3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
NXP USA Inc.
2N7002K,215
Infineon Technologies
IRF7201PBF
Infineon Technologies
IRF7201TR
Infineon Technologies
IPW90R340C3FKSA1
Infineon Technologies
SPI15N65C3HKSA1
Panasonic Electronic Components
2SK0665G0L
Infineon Technologies
IPU09N03LA G
Microsemi Corporation
APT58M50JCU3
Infineon Technologies
BSR606NH6327XTSA1
STMicroelectronics