SI4348DY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 8A 8SO
$0.00
Available to order
Reference Price (USD)
2,500+
$1.07780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SI4348DY-T1-E3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SI4348DY-T1-E3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.31W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPB65R125C7ATMA1
Microsemi Corporation
APT34F60BG
Vishay Siliconix
SIS452DN-T1-GE3
Infineon Technologies
IRFU2407
STMicroelectronics
STB200NF04T4
Infineon Technologies
IRLZ34NS
Infineon Technologies
SPI80N03S2L-06
Infineon Technologies
IRL3714ZL
Rohm Semiconductor
R6015ANZC8
Toshiba Semiconductor and Storage