SI4435FDY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 12.6A 8SOIC
$0.51
Available to order
Reference Price (USD)
2,500+
$0.15320
5,000+
$0.14440
12,500+
$0.13560
25,000+
$0.12504
62,500+
$0.12064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SI4435FDY-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SI4435FDY-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
STMicroelectronics
STH320N4F6-2
Vishay Siliconix
SQJQ186E-T1_GE3
Rohm Semiconductor
RTR025N05HZGTL
Fairchild Semiconductor
FDB6690S
onsemi
NTD3808N-1G
Vishay Siliconix
SIRA10DP-T1-GE3
Infineon Technologies
AUIRF7647S2TR
onsemi
FDBL86363-F085
Infineon Technologies
IPT60R022S7XTMA1
Infineon Technologies