SI4778DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 25V 8A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SI4778DY-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SI4778DY-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
IRF9640
Infineon Technologies
IPI80P03P4L04AKSA1
Infineon Technologies
IRL3714ZSTRRPBF
Infineon Technologies
IRF7460
onsemi
SFT1452-W
Infineon Technologies
IRFR3303TR
Infineon Technologies
IRF3205Z
Vishay Siliconix
IRFSL31N20DTRR
Infineon Technologies
SPI80N03S2L-05
Vishay Siliconix