SI4946BEY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 60V 6.5A 8-SOIC
$1.55
Available to order
Reference Price (USD)
2,500+
$0.57761
5,000+
$0.55049
12,500+
$0.53112
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4946BEY-T1-E3 by Vishay Siliconix is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SI4946BEY-T1-E3 provides reliable operation under stringent conditions. Vishay Siliconix's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
- Power - Max: 3.7W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Fairchild Semiconductor
FDMS3604AS
Infineon Technologies
IRF7306TRPBF
Rohm Semiconductor
US6K2TR
Nexperia USA Inc.
BUK9K12-60EX
Microchip Technology
MSCSM70AM10CT3AG
onsemi
NTQD6968NR2
Toshiba Semiconductor and Storage
SSM6P35FE(TE85L,F)
onsemi
2SK2530-TL-E-ON
Diodes Incorporated
DMG1023UVQ-7
Diodes Incorporated