SI5511DC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 30V 4A 1206-8
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Elevate your electronics with the SI5511DC-T1-GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SI5511DC-T1-GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
- Power - Max: 3.1W, 2.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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