SI5908DC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 4.4A 1206-8
$1.45
Available to order
Reference Price (USD)
3,000+
$0.65600
6,000+
$0.62520
15,000+
$0.60320
Exquisite packaging
Discount
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The SI5908DC-T1-GE3 from Vishay Siliconix is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SI5908DC-T1-GE3 provides reliable performance in demanding environments. Choose Vishay Siliconix for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.4A
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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