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SI7172ADP-T1-RE3

Vishay Siliconix
SI7172ADP-T1-RE3 Preview
Vishay Siliconix
MOSFET N-CH 200V PPAK SO-8
$1.26
Available to order
Reference Price (USD)
3,000+
$0.56908
6,000+
$0.54236
15,000+
$0.52328
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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