SI7309DN-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 8A PPAK1212-8
$1.09
Available to order
Reference Price (USD)
3,000+
$0.49200
6,000+
$0.46890
15,000+
$0.45240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI7309DN-T1-E3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Vishay Siliconix
SI5441BDC-T1-GE3
Infineon Technologies
IPL65R1K0C6SATMA1
Infineon Technologies
IPD60R600P7SAUMA1
Infineon Technologies
BSP615S2L
Fairchild Semiconductor
FDP15N50
Vishay Siliconix
SQM50P04-09L_GE3
STMicroelectronics
STFI10N65K3
STMicroelectronics
STP13N60DM2
Diodes Incorporated
DMN10H170SVT-13
onsemi