SI7342DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 9A PPAK SO-8
$0.00
Available to order
Reference Price (USD)
3,000+
$1.45530
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI7342DP-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI7342DP-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.25mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IRLU7833-701PBF
Toshiba Semiconductor and Storage
TPC8026(TE12L,Q,M)
STMicroelectronics
STP9NM50N
STMicroelectronics
STB160NF3LLT4
Infineon Technologies
IRF3515STRL
onsemi
FQB5N15TM
Renesas Electronics America Inc
RJK2055DPA-00#J0
onsemi
HUFA76413P3
IXYS
IXTA88N085T7
Vishay Siliconix