Shopping cart

Subtotal: $0.00

SI7457DP-T1-GE3

Vishay Siliconix
SI7457DP-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 100V 28A PPAK SO-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

STMicroelectronics

STS11N3LLH5

Renesas Electronics America Inc

NP180N04TUJ-E1-AY

Vishay Siliconix

SIR840DP-T1-GE3

Micro Commercial Co

MCAC10H03-TP

Infineon Technologies

IPI80N03S4L-04

Infineon Technologies

IRLU2905

Fairchild Semiconductor

FDMC7664

Infineon Technologies

IRF6728MTR1PBF

Top