SI7615BDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 29A/104A PPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SI7615BDN-T1-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SI7615BDN-T1-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4890 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 66W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
IXYS
IXTA182N055T
STMicroelectronics
STW13NM50N
Infineon Technologies
IRL540NLPBF
IXYS
IXTV280N055TS
Alpha & Omega Semiconductor Inc.
AOC2414
Infineon Technologies
IRFSL4610PBF
Infineon Technologies
IRLR7843TRRPBF
STMicroelectronics
STY34NB50
Fairchild Semiconductor
FQPF7N40
onsemi