SI7962DP-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 40V 7.1A PPAK SO-8
$0.00
Available to order
Reference Price (USD)
3,000+
$2.01627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SI7962DP-T1-E3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SI7962DP-T1-E3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.1A
- Rds On (Max) @ Id, Vgs: 17mOhm @ 11.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Infineon Technologies
IRF7101PBF
Alpha & Omega Semiconductor Inc.
AO4842L
Infineon Technologies
IRF7342PBF
Vishay Siliconix
SI8900EDB-T2-E1
Rohm Semiconductor
TT8J1TR
Vishay Siliconix
SI7905DN-T1-E3
Vishay Siliconix
SI6925ADQ-T1-GE3
Infineon Technologies
BSL316CL6327
Alpha & Omega Semiconductor Inc.
AO8801AL
onsemi