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SI8404DB-T1-E1

Vishay Siliconix
SI8404DB-T1-E1 Preview
Vishay Siliconix
MOSFET N-CH 8V 12.2A 4MICROFOOT
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V
  • FET Feature: -
  • Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA, CSPBGA

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