SIA406DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 12V 4.5A PPAK SC70-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SIA406DJ-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIA406DJ-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 19.8mOhm @ 10.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Vishay Siliconix
IRLZ24STRR
Infineon Technologies
IPD35N10S3L-26
Infineon Technologies
SI4435DYTR
Vishay Siliconix
SI3499DV-T1-E3
Infineon Technologies
SPI42N03S2L-13
Nexperia USA Inc.
PHP45NQ11T,127
Infineon Technologies
IPD06P005LSAUMA1
Toshiba Semiconductor and Storage
TK80S04K3L(T6L1,NQ
onsemi
HUFA75307D3
Vishay Siliconix