SIA456DJ-T3-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 1.1A/2.6A PPAK
$0.44
Available to order
Reference Price (USD)
1+
$0.44055
500+
$0.4361445
1000+
$0.431739
1500+
$0.4273335
2000+
$0.422928
2500+
$0.4185225
Exquisite packaging
Discount
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Upgrade your designs with the SIA456DJ-T3-GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SIA456DJ-T3-GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
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