SIA811DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 4.5A PPAK SC70-6
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Enhance your electronic projects with the SIA811DJ-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIA811DJ-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6 Dual
- Package / Case: PowerPAK® SC-70-6 Dual
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