SIDC06D120H8X1SA2
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
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$1.26000
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The SIDC06D120H8X1SA2 by Infineon Technologies is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The SIDC06D120H8X1SA2 is also used in smart home devices and wearable technology, ensuring seamless operation. Infineon Technologies's expertise in semiconductor technology guarantees that the SIDC06D120H8X1SA2 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 7.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 175°C
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