SIDC08D120H8X1SA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 150A WAFER
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The SIDC08D120H8X1SA1 by Infineon Technologies is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The SIDC08D120H8X1SA1 is also used in smart home devices and wearable technology, ensuring seamless operation. Infineon Technologies's expertise in semiconductor technology guarantees that the SIDC08D120H8X1SA1 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 150A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 175°C
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