SIDR402DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
$2.49
Available to order
Reference Price (USD)
1+
$2.49000
500+
$2.4651
1000+
$2.4402
1500+
$2.4153
2000+
$2.3904
2500+
$2.3655
Exquisite packaging
Discount
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Meet the SIDR402DP-T1-RE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIDR402DP-T1-RE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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