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SIE820DF-T1-E3

Vishay Siliconix
SIE820DF-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK® (S)
  • Package / Case: 10-PolarPAK® (S)

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