SIHA25N60EFL-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 600V
$4.96
Available to order
Reference Price (USD)
1+
$4.96000
500+
$4.9104
1000+
$4.8608
1500+
$4.8112
2000+
$4.7616
2500+
$4.712
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHA25N60EFL-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHA25N60EFL-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IRLR8256TRPBF
onsemi
2SK4198FS
Toshiba Semiconductor and Storage
TK5A65W,S5X
NXP USA Inc.
BUK661R6-30C118
onsemi
NVMFS4C05NT3G
Toshiba Semiconductor and Storage
TPH1R204PL,L1Q
Vishay Siliconix
SIHA14N60E-E3
Infineon Technologies
IRLU024NPBF
Fairchild Semiconductor
FQPF7N10L
Vishay Siliconix