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SIHA6N65E-E3

Vishay Siliconix
SIHA6N65E-E3 Preview
Vishay Siliconix
MOSFET N-CHANNEL 650V 7A TO220
$2.13
Available to order
Reference Price (USD)
1+
$2.24000
10+
$2.02000
100+
$1.62360
500+
$1.26280
1,000+
$1.04632
3,000+
$0.97416
5,000+
$0.93808
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack

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