SIHG105N60EF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 29A TO247AC
$4.53
Available to order
Reference Price (USD)
1+
$4.53000
500+
$4.4847
1000+
$4.4394
1500+
$4.3941
2000+
$4.3488
2500+
$4.3035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG105N60EF-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHG105N60EF-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Toshiba Semiconductor and Storage
TK12Q60W,S1VQ
NTE Electronics, Inc
NTE2384
Nexperia USA Inc.
PSMN041-80YLX
Microchip Technology
MSC060SMA070B
Fairchild Semiconductor
FDD8586
Taiwan Semiconductor Corporation
TSM60NB900CP ROG
Rohm Semiconductor
RRQ030P03TR
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Diodes Incorporated
DMNH6011LK3Q-13
STMicroelectronics